收藏本站
PD- 96128A
IRF7478QPbF
HEXFET ? Power MOSFET
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
V DSS
60V
R DS(on) max (m W)
26@V GS = 10V
30@V GS = 4.5V
I D
4.2A
3.5A
l
150°C Operating Temperature
A
l
Lead-Free
S
1
8
A
D
Description
These HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These benefits combine to make this design an
extremely efficient and reliable device for use in a
wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
S
S
G
2
3
4
Top View
7
6
5
D
D
D
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
7.0
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation ?
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
5.6
56
2.5
0.02
± 20
3.7
A
W
W/°C
V
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 150
300 (1.6mm from case )
°C
Thermal Resistance
Symbol
R θ JL
R θ JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ?
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes ? through ? are on page 8
www.irf.com
1
08/09/10
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRF7484TRPBF MOSFET N-CH 40V 14A 8-SOIC
IRF7521D1TRPBF MOSFET N-CH 20V 2.4A MICRO8
IRF7521D1TR MOSFET N-CH 20V 2.4A MICRO8
IRF7523D1TRPBF MOSFET N-CH 30V 2.7A MICRO8
IRF7523D1TR MOSFET N-CH 30V 2.7A MICRO8
IRF7524D1TR MOSFET P-CH 20V 1.7A MICRO8
IRF7526D1PBF MOSFET P-CH 30V 2A MICRO8
IRF7526D1TR MOSFET P-CH 30V 2A MICRO8
相关代理商/技术参数
IRF7478TR 功能描述:MOSFET MOSFET, 60V, 7.6A, 26 mOhm, 21 nC Qg, SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7478TRPBF 功能描述:MOSFET MOSFT 60V 7.6A 26mOhm 21nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7484 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET
IRF7484PBF 功能描述:MOSFET 40V 1 N-CH HEXFET 10mOhms 69nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7484Q 功能描述:MOSFET N-CH 40V 14A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRF7484QPBF 制造商:International Rectifier 功能描述:MOSFET, 40V, 14A, 10 MOHM, 69 NC QG, SO-8 - Rail/Tube
IRF7484QTRPBF 功能描述:MOSFET MOSFET, 40V, 14A 10 mOhm, 69 nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF7484TR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 40V 14A 8SOIC - Tape and Reel